Semiconductor radiation detector
US6455858B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 13, 2000 |
| Grant date | Sep 24, 2002 |
| Priority date | — |
| Expiry date | Nov 27, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/48091
Abstract
A semiconductor radiation detector is provided to detect x-ray and light photons. The entrance electrode is segmented by using variable doping concentrations. Further, the entrance electrode is physically segmented by inserting n+ regions between p+ regions. The p+ regions and the n+ regions are individually biased. The detector elements can be used in an array, and the p+ regions and the n+ regions can be biased by applying potential at a single point. The back side of the semiconductor radiation detector has an n+ anode for collecting created charges and a number of p+ cathodes. Biased n+ inserts can be placed between the p+ cathodes, and an internal resistor divider can be used to bias the n+ inserts as well as the p+ cathodes. A polysilicon spiral guard can be implemented surrounding the active area of the entrance electrode or surrounding an array of entrance electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.