Image sensor
US6455909B1 · kind B1 · utility
1Cited by
8References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 1, 2000 |
| Grant date | Sep 24, 2002 |
| Priority date | — |
| Expiry date | Dec 1, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
Abstract
A MOS type image sensor including a plurality of pixel array sections each including, as interconnects traversing the pixel array section, a signal reset line and a row selection line stacked with each other and sandwiching a dielectric film. In the image sensor, the areas of the signal reset line and the row selection line occupied in the pixel section can be reduced to consequently increase the area of the light-receiving section occupied in the pixel section, thereby increasing the sensitivity to light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.