Silicon-based semiconductor component with high-efficiency barrier junction termination

US6455911B1 · kind B1 · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Dietrich Stephani · Bubenreuth, DE
• Heinz Mitlehner · Uttenreuth, DE

Key dates

• Filing date: Aug 23, 1996
• Grant date: Sep 24, 2002
• Expiry date: Feb 16, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/104

Abstract

A silicon-based semiconductor component includes a high-efficiency barrier junction termination. In the semiconductor component, a silicon semiconductor region takes on the depletion region of an active area of the semiconductor component. The junction termination for the active area is formed with silicon with a doping that is opposite to that of the semiconductor region, and the junction termination surrounds the active area on or in a surface of the semiconductor region. The junction termination is doped with a dopant that has a low impurity energy level of at least 0.1 eV in silicon. Preferably Be, Zn, Ni, Co, Mg, Sn or In are used as acceptors and S, Se or Ti are provided as donors.