Patent · US Expired

High-frequency semiconductor laser module

US6456641B1 · kind B1 · utility

8Cited by

4References

12Claims

0Family size

Assignee

Robert Bosch GmbH · DE

Inventors

Heiner Hauer · Fellbach, DE
Albrecht Kuke · Auenwald, DE
Eberhard Moess · Murrhardt, DE

Key dates

Filing date	Oct 27, 1999
Grant date	Sep 24, 2002
Priority date	—
Expiry date	Oct 27, 2019

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/06226
WIPO fieldOptics
WIPO sectorInstruments

Abstract

The invention is directed to a high-frequency semiconductor laser module with a silicon substrate, especially made of low-impedance silicon, a laser diode arranged thereon, and at least two lines for the H-F feed, one of which is insulated from the silicon substrate by a dielectric layer. According to the invention, the laser diode is arranged on the silicon substrate via a metallic mounting layer, and the H-F line is guided close to the laser diode on the dielectric layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.