Crystallization apparatus and method using non-vacuum process
US6458199B1 · kind B1 · utility
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4References
15Claims
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Key dates
| Filing date | May 26, 2000 |
| Grant date | Oct 1, 2002 |
| Priority date | — |
| Expiry date | May 26, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1016
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A crystallization apparatus and method that is adapted to crystallize a semiconductor using a non-vacuum process. In the apparatus and method, laser beams are irradiated onto a substrate to grow a crystal unilaterally from the side surface of the substrate. Grain boundaries are minimized under the air atmosphere, so that a crystallization of the substrate can be made in a non-vacuum state to improve the throughput.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.