High power PMOS device
US6458667B1 · kind B1 · utility
0Cited by
2References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2000 |
| Grant date | Oct 1, 2002 |
| Priority date | — |
| Expiry date | Mar 21, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/411
Abstract
An improved MOS transistor and method for making it are described. The MOS transistor's source and drain have a first conductivity type and are separated from each other by a first region having a second conductivity type opposite to the first conductivity type. A second region, also having the second conductivity type, is formed adjacent to the drain and is separated from the first region by the drain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.