Method for manufacturing semiconductor devices with allevration of thermal stress generation in conductive coating
US6458703B2 · kind B2 · utility
4Cited by
8References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 3, 1999 |
| Grant date | Oct 1, 2002 |
| Priority date | — |
| Expiry date | Sep 3, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53223
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device that fills contact holes with conductive material such as aluminum or an aluminum alloy. A semiconductor device is manufactured by the process of forming an opening such as a contact hole in an interlayer dielectric film formed on a semiconductor substrate having a device element formed thereon. A first film and a second film made of conductive material such as aluminum or an alloy containing aluminum are formed on the interlayer dielectric film and the opening. The second film is then gradually cooled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.