High temperature implant apparatus
US6458723B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2000 |
| Grant date | Oct 1, 2002 |
| Priority date | — |
| Expiry date | Jun 14, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31701
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An ion implantation apparatus and method. The apparatus has a vacuum chamber and an ion beam generator to generate an ion beam in the vacuum chamber. The apparatus also has an implant wheel (10), in the vacuum chamber, having a plurality of circumferentially distributed substrate holding positions. Each of the substrate holding positions comprises a substrate holder (17), which includes an elastomer overlying the substrate holder (17) and a thermal insulating material (71) (e.g., quartz, silicon, ceramics, and other substantially non-compliant materials) overlying the elastomer (72). The present thermal insulating material increases a temperature of a substrate as it is implanted.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.