Capacitor structure and fabrication process
US6460416B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 10, 1998 |
| Grant date | Oct 8, 2002 |
| Priority date | — |
| Expiry date | Jul 10, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L9/0075
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The invention relates to a capacitor structure with two substrates (1) each having a capacitor electrode (3) deposited on its surface, the substrates (1) being joined together by bump structures located on both sides of the capacitor electrodes (3) such that the capacitor electrodes (3) lie opposite each other and form a capacitor, the distance d between the capacitor electrodes (3) being defined by the height of the bump structures, and measuring connections (5) being provided on one of the substrates (1) for making capacitance measurements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.