Patent · US Expired

Capacitor structure and fabrication process

US6460416B1 · kind B1 · utility

2Cited by
6References
13Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJul 10, 1998
Grant dateOct 8, 2002
Priority date
Expiry dateJul 10, 2018

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01L9/0075
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

The invention relates to a capacitor structure with two substrates (1) each having a capacitor electrode (3) deposited on its surface, the substrates (1) being joined together by bump structures located on both sides of the capacitor electrodes (3) such that the capacitor electrodes (3) lie opposite each other and form a capacitor, the distance d between the capacitor electrodes (3) being defined by the height of the bump structures, and measuring connections (5) being provided on one of the substrates (1) for making capacitance measurements.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.