Substrate for epitaxial growth
US6461447B1 · kind B1 · utility
1Cited by
7References
3Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 30, 2000 |
| Grant date | Oct 8, 2002 |
| Priority date | — |
| Expiry date | Jun 30, 2020 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B15/203
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A substrate having a surface on which silicon is epitaxially grown; wherein the substrate is cut from an oxygen induced stacking fault generation area of a single crystal silicon rod grown by the Czochralski method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.