Oxynitride laminate “blocking layer” for thin film semiconductor devices
US6461899B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2000 |
| Grant date | Oct 8, 2002 |
| Priority date | — |
| Expiry date | Apr 26, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
Channel doping is an effective method for controlling Vth, but if Vth shifts to the order of −4 to −3 V when forming circuits such as a CMOS circuit formed from both an n-channel TFT and a P-channel TFT on the same substrate, then it is difficult to control the Vth of both TFTs with one channel dope. In order to solve the above problem, the present invention forms a blocking layer on the back channel side, which is a laminate of a silicon oxynitride film (A) manufactured from SiH4, NH3, and N2O, and a silicon oxynitride film (B)manufactured from SiH4and N2O. By making this silicon oxynitride film laminate structure, contamination by alkaline metallic elements from the substrate can be prevented, and influence by stresses, caused by internal stress, imparted to the TFT can be relieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.