Method of doping silicon with phosphorus and growing oxide on silicon in the presence of steam
US6461948B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2000 |
| Grant date | Oct 8, 2002 |
| Priority date | — |
| Expiry date | Mar 29, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/223
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of doping silicon that involves placing a silicon wafer in spaced relationship to a solid phosphorus dopant source at a first temperature for a time sufficient to deposit a phosphorus-containing layer on the surface of the wafer and subsequently oxidizing the doped silicon wafer with wet oxygen or pyrogenic steam at a second temperature lower than the first temperature. The silicon wafer is maintained in spaced relationship to the solid phosphorus dopant source during the oxidizing step. The temperatures are selected such that the solid phosphorus dopant source evolves P2O5 at the first temperature and the second temperature is sufficiently lower than the first temperature to decrease evolution of P2O5 from the solid phosphorus dopant source during the oxidizing step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.