LPCVD furnace uniformity improvement by temperature ramp down deposition system
US6461979B1 · kind B1 · utility
3Cited by
9References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2002 |
| Grant date | Oct 8, 2002 |
| Priority date | — |
| Expiry date | Feb 13, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0217
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A new method is provided for the application of Chemical Vapor Deposition (CVD) processes. Where conventional CVD processes are performed while maintaining one, constant temperature during the CVD process, from the start of the CVD process up to the point where the CVD process is completed, the invention provides for first raising the temperature to a processing temperature and then gradually reducing the applied temperature within the cycle time that is required for the completion of the CVD process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.