Integrated gallium arsenide communications systems
US6462360B1 · kind B1 · utility
57Cited by
121References
40Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2001 |
| Grant date | Oct 8, 2002 |
| Priority date | — |
| Expiry date | Aug 6, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/00011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Composite semiconductor structures and methods are provided for communications systems, specifically, those utilizing RF signals. Antenna switches, and amplifiers in receiver and transmitter sections of the communications systems are shown that are fabricated within a compound semiconductor layer of a composite semiconductor structure is integrated with support circuitry in a non-compound semiconductor substrate. Support circuitry that may be integrated include negative voltage generation circuitry, drain current protection circuitry, and voltage regulation circuitry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.