Insulated gate field effect device
US6462377B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 12, 2001 |
| Grant date | Oct 8, 2002 |
| Priority date | — |
| Expiry date | Feb 12, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/118
Abstract
A semiconductor body (10) has first and second opposed major surfaces (10a and 10b), with a first region (11) of one conductivity type and a plurality of body regions (32) of the opposite conductivity type each forming a pn junction with the first region (11). A plurality of source regions (33) meet the first major surface (10a ) and are each associated with a corresponding body region (32) such that a conduction channel accommodating portion (33a) is defined between each source region (33) and the corresponding body region (32). An insulated gate structure (30,31) adjoins each conduction channel area (33a) for controlling formation of a conduction channel in the conduction channel areas to control majority charge carrier flow from the source regions (33) through the first region (11) to a further region (14) adjoining the second major surface (10b). A plurality of field shaping regions (20) are dispersed within the first region (11) and extend from the source regions (33) towards the further region (14) such that, in use, a voltage is applied between the source and further regions (33 and 14) and the device is non-conducting, the field shaping regions (20) provide a path for charg…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.