Schottky device

US6462393B2 · kind B2 · utility

Assignee

• FabTech, Inc. · US

Inventors

• Walter Riley Buchanan · Olathe, US
• Roman Hamerski · Olathe, US

Key dates

• Filing date: Mar 20, 2001
• Grant date: Oct 8, 2002
• Expiry date: Mar 20, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/106

Abstract

An improved Schottky device, having a low resistivity layer of semiconductor material, a high resistivity layer of semiconductor material and a buried dopant region positioned in the high resistivity layer utilized to reduce reverse leakage current. The low resistivity layer can be an N+ material while the high resistivity layer can be an N− layer. The buried dopant region can be of P+ material, thus forming a PN junction with an associated charge depletion zone in the N− layer and an associated low reverse leakage current. The location of the P+ material allows for a full Schottky barrier between the N− material and a barrier metal to be maintained, thus the device experiences a low forward voltage drop.