RF power amplifier circuitry and method for amplifying signals
US6462620B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2000 |
| Grant date | Oct 8, 2002 |
| Priority date | — |
| Expiry date | Sep 12, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An RF power amplifier is provided for use with wireless transmission systems such as cellular phones. An RF power amplifier includes direct drive amplifier circuitry operating in a push-pull scheme. The RF power amplifier includes a pair of switching devices driven by a pair of mutually coupled inductive devices. The inductive devices may be magnetically or capacitively coupled together. The RF power amplifier may be formed on a single integrated circuit and include an on-chip bypass capacitor. The RF power amplifier may utilize a voltage regulator for providing a regulated voltage source. The RF power amplifier may be provided using a dual oxide gate device resulting in an improved amplifier. The RF power amplifier may be packaged using flip chip technology and multi-layer ceramic chip carrier technology.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.