Method for manufacturing a magnetic device
US6465053B1 · kind B1 · utility
Inventors
Key dates
| Filing date | Feb 16, 2001 |
| Grant date | Oct 15, 2002 |
| Priority date | — |
| Expiry date | Feb 16, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N59/00
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Magnetic field sensors and magnetic memories have at least two magnetoresistive bridge elements (A,B,C,D), wherein each magnetoresistive element comprises a free (F) and a pinned (P) ferromagnetic layer. The magnetization directions of pinned ferromagnetic layers are different for the two bridge elements. In the method, in a first deposition step, a first ferromagnetic layer of one of the two said elements is deposited, during which deposition a magnetic field is applied to pin the magnetization direction MP in the first ferromagnetic layer in a first direction. Then, in a second deposition step, a second ferromagnetic layer of the other of the two said elements is deposited, during which deposition a magnetic field is applied to pin the magnetization direction in the second ferromagnetic layer in a second direction different from, preferably opposite to, the magnetization direction in the first ferromagnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.