Plasma CVD method and apparatus
US6465057B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 10, 1997 |
| Grant date | Oct 15, 2002 |
| Priority date | — |
| Expiry date | Jul 10, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32706
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides a plasma CVD method for forming a plasma from a deposition material gas by application of an electric power, and thereby forming a film on a deposition target object in the plasma, wherein the formation of the plasma from the material gas is performed by applying an RF power and a DC power, and the DC power is applied to an electrode carrying the deposition target object. The present invention also provides a plasma CVD apparatus for forming a plasma from a deposition material gas by applying an electric power from the power applying means, and thereby forming a film on a deposition target object by exposing the deposition target object to the plasma, wherein the power applying means includes RF power applying means and DC power applying means, and the DC power applying means applies an electric power to the electrode carrying the deposition target object.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.