Patent · US Expired

Photovoltaic element and method of manufacturing the same

US6465727B2 · kind B2 · utility

20Cited by
2References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 25, 2001
Grant dateOct 15, 2002
Priority date
Expiry dateMay 25, 2021

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02E10/548

Abstract

In a photovoltaic element sequentially comprising at least an amorphous semiconductive layer of one conductivity type and an amorphous semiconductive layer of the other conductivity type on a surface of a transparent conductive film, the transparent conductive film includes a surface region having a lower crystalline property on a surface side than that in an inner portion and the amorphous semiconductive layer of one conductivity type is formed on the surface region. An excellent ohmic property is obtained between the transparent conductive film and the amorphous semiconductive layer of one conductivity type.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.