Method and structure for forming an electrode on a light emitting device
US6465808B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 11, 2001 |
| Grant date | Oct 15, 2002 |
| Priority date | — |
| Expiry date | Jan 11, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/82
Abstract
A method and structure for forming an electrode on a light emitting device. The present invention provides a transparent electrode or a reflective electrode formed on a p-type gallium nitride-based compound semiconductor. The electrode comprises a plurality of opaque ohmic contact dots formed on the p-type gallium nitride-based compound semiconductor and a transparent conductive layer (or a light reflective conductive layer) covering the p-type gallium nitride-based compound semiconductor. Utilizing the present invention, the electrode is suitable for any light emitting device, and the light efficiency of the light emitting device is higher than that of the conventional light emitting device. Furthermore, the process of forming the electrode is easier than that of the conventional process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.