Vertical split gate field effect transistor (FET) device

US6465836B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Chrong-Jung Lin · Taipei, TW
• Sheng-Wei Tsao · Hsinchu, TW
• Di-Son Kuo · Hsinchu, TW
• Jack Y. Yeh · North Potomac, US
• Wen-Ting Chu
• Chung-Li Chang · Baoshan, TW
• Chia-Ta Hsieh · Tainan, TW

Key dates

• Filing date: Mar 29, 2001
• Grant date: Oct 15, 2002
• Expiry date: Mar 29, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6894

Abstract

Within both a split gate field effect transistor (FET) device and a method for fabricating the split gate field effect transistor (FET) device there is formed within a semiconductor substrate a trench within whose sidewall is fully contained a channel region within the split gate field effect transistor (FET) device. Similarly, there is also formed within the split gate field effect transistor a floating gate electrode within the trench and covering within the trench a lower sub-portion of the channel region. Finally, the floating gate electrode in turn has formed vertically and horizontally overlapping thereover within the trench a control gate electrode which covers an upper sub-portion of the channel. The split gate field effect transistor (FET) device is fabricated with enhanced areal density and enhanced performance.