Method and apparatus for implementing efficient CMOS photo sensors
US6465862B1 · kind B1 · utility
14Cited by
22References
10Claims
0Family size
Inventor
Key dates
| Filing date | Oct 5, 1999 |
| Grant date | Oct 15, 2002 |
| Priority date | — |
| Expiry date | Oct 5, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/802
Abstract
Semiconductor photo sensor and semiconductor wafer processing designs are disclosed. The disclosed designs provide significantly improved photo sensor performance within the framework of a CMOS process. CMOS compatible fabrication procedures are presented, that enable tailoring of the 3-dimensional doping profile and defect structure within a photo sensor, to optimize light detection efficiency and minimize noise from dark current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.