Capsule for at least one high power transistor chip for high frequencies
US6465883B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 7, 1999 |
| Grant date | Oct 15, 2002 |
| Priority date | — |
| Expiry date | Jul 7, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a capsule (1) for at least one high power transistor chip (17) for high frequencies, comprising an electrically and thermally conductive flange (10), at least two electrically insulating substrates (15), and at least two electrical connections (16), and a cover member, where the high power transistor chip (17) is arranged on the flange (10). The high power transistor chip (17) and the electrically insulating substrates (15) are arranged on the flange (10). The electrical connections (16) are arranged on electrically insulating substrates (15) and the electrically insulating substrates (15) are connected to the flange (10) and open and separate from the high power transistor chip (17).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.