Patent · US Expired

Method of fabricating optical nonlinear thin film waveguide and optical nonlinear thin film waveguide

US6466722B1 · kind B1 · utility

3Cited by
8References
4Claims
0Family size

Assignees

Inventors

Key dates

Filing dateSep 11, 2000
Grant dateOct 15, 2002
Priority date
Expiry dateSep 11, 2020

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG02F1/3555
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A Ge-added SiO2 thin film (12) is formed on a glass substrate (10), and metal film (14) is formed thereon (S11 to S13). By etching the metal film (14), a pair of electrodes (14a, 14b) mutually opposed at a predetermined interval is formed(S14). An insulating thin film (16) is formed on the insulating film (12) and the electrodes (14a, 14b) (S15). While applying ultraviolet radiation, a high voltage is applied between the electrodes (14a, 14b) to perform ultraviolet excitement polling to impart an optical nonlinearity to a channel region (18)(S16). By controlling the voltage application to the channel region (18) having the optical nonlinearity, the light transmitted through the channel region (18) is controlled. Thus, an optical nonlinear waveguide for propagating single mode light is formed on a glass substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.