Semiconductor device simulation method, semiconductor device simulator, computer program for semiconductor device simulation, and method of manufacturing the semiconductor device
US6467066B2 · kind B2 · utility
7Cited by
6References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 13, 2001 |
| Grant date | Oct 15, 2002 |
| Priority date | — |
| Expiry date | Apr 26, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F30/23
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A simulation method simulates a self-aligned silicide (SALICIDE) process according to heat treatment temperature and changes in the composition of a silicide film during first and second heat treatments. The simulation method separately simulates silicide reactions in the first and second heat treatments according to species (metal or silicon) diffusing through a silicide, to thereby improve the accuracy of simulations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.