Method of fabricating a microwave microstrip/waveguide transition structure
US6467152B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 11, 1999 |
| Grant date | Oct 22, 2002 |
| Priority date | — |
| Expiry date | Dec 11, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49156
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
A microwave microstrip/waveguide transition structure includes a substrate, an elongated microstrip layer residing on a surface of the substrate, and an elongated integral hollow waveguide on the surface of the substrate. The microstrip layer and a side of the hollow waveguide constitute a single continuous piece of metal. The transition structure is fabricated by providing a substrate, depositing a metallic layer on the substrate, and depositing a metallic hollow housing continuous with a portion of a length of the metallic layer. The metallic hollow waveguide bounded by the metallic layer and the metallic hollow housing and having a contained volume therewithin is thereby defined.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.