Method for manufacturing electro-optic element
US6468822B2 · kind B2 · utility
32Cited by
3References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2001 |
| Grant date | Oct 22, 2002 |
| Priority date | — |
| Expiry date | Mar 30, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/136286
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
By using a metal thin film comprising a layer of metal and a layer obtained by adding nitrogen atoms to metal for a metal thin film which becomes a gate electrode and the like, and for a metal thin film which becomes a source electrode and a drain electrode, there is prepared electro-optic elements free from display defects caused by high contact resistance at connected portion of the pixel electrode with the above electrodes even when a low resistance line material is used.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.