Method for producing semiconductor temperature sensor
US6468825B1 · kind B1 · utility
14Cited by
14References
18Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 11, 2000 |
| Grant date | Oct 22, 2002 |
| Priority date | — |
| Expiry date | Feb 11, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/642
Abstract
A method for producing a semiconductor temperature sensor comprises the steps of forming PNP bipolar transistors and PMOS transistors so that a base region of each of the PNP bipolar transistors and a corresponding N-well region of each of the PMOS transistors are formed at the same time, and connecting the PNP bipolar transistors in a Darlington connection.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.