Method of fabricating a thin film transistor
US6468872B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 11, 2000 |
| Grant date | Oct 22, 2002 |
| Priority date | — |
| Expiry date | Oct 5, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
The present invention relates to a simplified method of fabricating a thin film transistor (TFT), including the steps of preparing a first conductive type TFT including a first semiconductor layer and a first gate electrode and a second conductive type TFT including a second semiconductor layer and a second gate electrode on a substrate; doping the first and second semiconductor layers with a first conductive type impurity using the first and second gate electrodes as a mask; forming a doping mask covering the first conductive type TFT; counter-doping the second semiconductor layer with a second conductive type impurity using the doping mask and the second gate electrode as masks; and forming a CMOS TFT by electrically connecting the first conductive type TFT to the second conductive type TFT.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.