Methods of forming thin films by atomic layer deposition
US6468924B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 31, 2001 |
| Grant date | Oct 22, 2002 |
| Priority date | — |
| Expiry date | May 31, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02197
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods of forming thin films include forming a first layer comprising a first element that is chemisorbed to a surface of a substrate, by exposing the surface to a first source gas having molecules therein that comprise the first element and a halogen. A step is then performed to expose the first layer to an activated hydrogen gas so that halogens associated with the first layer become bound to hydrogen provided by the activated hydrogen gas. The first layer may then be converted to a thin film comprising the first element and a second element, by exposing a surface of the first layer to a second source gas having molecules therein that comprise the second element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.