SOI type MOS element and manufacturing method thereof
US6469349B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 29, 2001 |
| Grant date | Oct 22, 2002 |
| Priority date | — |
| Expiry date | May 29, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/608
Abstract
To present a SOI type MOS element excellent in yield, performance and characteristic, easy in manufacture, and low in cost, and a method of manufacturing the same. A SOI type MOS transistor structure comprising polysilicon electrodes 128 for gate, source and drain composed by burying into trench holes 120a, 120b, 120c respectively formed in a semiconductor substrate 110, a gate oxide film 122 formed in the entire inside of the trench hole 120a, N-diffusion layer 124 and N+ diffusion layer 126 formed in the entire inside of the trench holes 120b and 120c, and a thick SiO2 film 114 in a trench hole 113 formed in the semiconductor substrate 110 so as to surround the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.