Semiconductor device and a method for production thereof
US6469359B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 17, 2001 |
| Grant date | Oct 22, 2002 |
| Priority date | — |
| Expiry date | Jan 17, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
Abstract
A semiconductor device of planar structure has a pn-junction (10) formed by a first layer (1) doped according to a first conductivity type, n or p, and on top thereof a second layer (2) doped according to a second conductivity type. The second layer has a higher doping concentration than the first layer and a lateral edge thereof is provided with an edge termination with second zones of said second conductivity type separated by first zones (4) of said first conductivity type arranged so that the total charge and/or the effective sheet charge density of dopants according to said second conductivity type is decreasing towards the laterally outer border (8) of the edge termination. A third layer (5) doped according to said first conductivity type is arranged on top of said second layer at least in the region of the edge termination for burying the edge termination of the device thereunder.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.