Method for producing a high-speed power diode with soft recovery, and a power diode produced using such a method
US6469368B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 3, 2001 |
| Grant date | Oct 22, 2002 |
| Priority date | — |
| Expiry date | Jul 3, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method for producing a high-speed power diode with soft recovery, in which method the carrier life within the associated semiconductor substrate (10) is governed by first, unmasked bombardment (14) with an axial profile and by subsequent, second, masked bombardment (15) with a lateral profile, improved reverse characteristics are achieved in that the first, unmasked bombardment is ion bombardment (14) which governs the switching response of the power diode and in that the second, masked bombardment is electron bombardment (15), which reduces the active area of the power diode. In a power diode equipped with such a semiconductor substrate (10), the thermal resistance Rth is reduced in relation to the active area of the power diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.