Metal oxide semiconductor transistor circuit and semiconductor integrated circuit using the same
US6469568B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2000 |
| Grant date | Oct 22, 2002 |
| Priority date | — |
| Expiry date | Dec 22, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/85
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A select circuit switches a connection from a gate terminal of an NMOS transistor or a substrate voltage terminal to a semiconductor substrate or well by a Select signal. At this time, a voltage of the substrate voltage terminal is set to be lower than a gate voltage in an OFF state. Consequently, when the semiconductor substrate or well is connected to the gate terminal in an active state, the off-current can be reduced to 10−10 A/&mgr;m. When the substrate voltage terminal is connected to the semiconductor substrate or well in a standby state, the off-current can be further reduced to 10−12 A/&mgr;m. Thus, leakage currents in the standby state and leakage currents flowing from the power supply voltage terminal to the ground voltage terminal in an active state can be suppressed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.