Method of mass loading of thin film bulk acoustic resonators (FBAR) for creating resonators of different frequencies and apparatus embodying the method
US6469597B2 · kind B2 · utility
87Cited by
13References
21Claims
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Key dates
| Filing date | Mar 5, 2001 |
| Grant date | Oct 22, 2002 |
| Priority date | — |
| Expiry date | Mar 5, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/42
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a resonator, and in particular, a thin film bulk acoustic resonator (FBAR), and a resonator embodying the method are disclosed. An FBAR is fabricated on a substrate by introducing a mass loading electrode to a bottom electrode layer. For a substrate having multiple resonators, mass loading bottom electrode is introduced for only selected resonator to provide resonators having different resonance frequencies on the same substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.