Patent · US Expired

Internal protection circuit and method for on chip programmable poly fuses

US6469884B1 · kind B1 · utility

9Cited by
4References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 24, 1999
Grant dateOct 22, 2002
Priority date
Expiry dateDec 24, 2019

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C17/18
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

An integrated circuit (10) having at least one programmable fuse (F1) and ESD circuitry (MN3, MN1) preventing the fuse (F1) from being unintentionally blown when a voltage transient exists on a main voltage potential (Vmain). The ESD circuitry preferably comprises of MOSFET switches which are coupled to turn on quicker than a main fuse programming switch (MNmain) due to the voltage transient, thereby insuring that the main switch remains off during the voltage transient to prevent the unintentional blowing of the fuse F1. The circuit is well suited for programmable logic device (PLDs), allowing for read voltages as low as 6 volts, and allowing for programming voltages as high as 40 volts.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.