Flash memory device capable of preventing program disturb and method for programming the same
US6469933B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2001 |
| Grant date | Oct 22, 2002 |
| Priority date | — |
| Expiry date | Sep 13, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method for programming a non-volatile semiconductor memory device that avoids the program disturb problem. In the programming method, ground voltage is applied to a first bit line corresponding to a memory cell to be programmed, and power supply voltage is applied to a second bit line corresponding to a memory cell to be prevented from being programmed. Next, a program voltage is applied to a word line connected to the memory cell to be programmed. The program voltage is stepped up to a desired voltage level of each program cycle from the first voltage thereby to reduce coupling between selected and non-selected bit and word lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.