Method of manufacturing a nitride series III-V group compound semiconductor
US6471769B2 · kind B2 · utility
2Cited by
6References
12Claims
0Family size
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Key dates
| Filing date | Aug 3, 1999 |
| Grant date | Oct 29, 2002 |
| Priority date | — |
| Expiry date | Aug 3, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/406
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
When nitride series III-V group compound semiconductor is manufactured by gas phase growing using starting material for a group III element, ammonia as a starting material for a group V element and hydrogen, the gas phase molar ratio of hydrogen to the total amount of hydrogen and ammonia (H2/(H2+NH3)) is specified to 0.3<(H2/(H2+NH3))<0.7, 0.3<(H2/(H2+NH3))<0.6 or 0.4<(H2/(H2+NH3))<0.5. A nitride series III-V group compound semiconductor can thus be manufactured with less non-emission center and of excellent crystallinity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.