Gas feed ceramic structure for semiconductor-producing apparatus
US6471779B1 · kind B1 · utility
500Cited by
7References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2000 |
| Grant date | Oct 29, 2002 |
| Priority date | — |
| Expiry date | Apr 26, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67109
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A gas feed ceramic structure for feeding a gas into a semiconductor-producing apparatus, includes a planar substrate having a gas-feeding surface and a rear surface. The planar substrate has depressions formed from the rear surface toward the gas-feeding surface to define thin portions between the depressions and the gas-feed surface. Each of the thin portions includes a plurality of gas feed holes for feeding the gas to a side of the gas-feeding surface of the substrate, and one open end of the gas feed holes is provided at the gas-feeding surface of the substrate, and the other open end faces the depressions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.