Seed layer of copper interconnection via displacement
US6472023B1 · kind B1 · utility
23Cited by
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10Claims
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Key dates
| Filing date | Jul 10, 2001 |
| Grant date | Oct 29, 2002 |
| Priority date | — |
| Expiry date | Jul 10, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76843
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for the fabrication of submicron copper interconnection useful on IC structures without deposition of copper seed is described. A dense metal layer can be deposited through contact displacement reaction between diffusion barrier layer and metal ions in solution under appropriate conditions. The metal layer formed by the displacement deposition can serve as the conducting material for subsequent copper electroplating. Moreover, the costly process for applying seed layer through CVD or PVD can be eliminated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.