Method for manufacturing a ferroelectric capacitor having improved polarization characteristics and a method for manufacturing a ferroelectric memory device incorporating such capacitor
US6472229B1 · kind B1 · utility
9Cited by
1References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 5, 1998 |
| Grant date | Oct 29, 2002 |
| Priority date | — |
| Expiry date | Jun 5, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31122
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The purpose of this invention is to provide a method for manufacturing capacitors free of polarization fatigue even when the treatment is performed at a low temperature.Amorphous layer 32 made of lead zirconate titanate and containing excess lead is formed on lower electrode 13 made of iridium. The amorphous layer is crystallized by a heat treatment to form PZT film 14. Structural transition layer 33 containing excess Pb formed on the surface of PZT film 14 during the aforementioned crystallization is removed by means of dry etching. In this way, a PZT capacitor is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.