Method of forming an integrated CMOS capacitive pressure sensor
US6472243B2 · kind B2 · utility
19Cited by
3References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 11, 2000 |
| Grant date | Oct 29, 2002 |
| Priority date | — |
| Expiry date | Jan 11, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/40
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A capacitive pressure sensor (10) utilizes a diaphragm (38) that is formed along with forming gates (56,57) of active devices on the same semiconductor substrate (11).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.