Method for fabricating semiconductor device using a CVD insulator film
US6472281B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 28, 1999 |
| Grant date | Oct 29, 2002 |
| Priority date | — |
| Expiry date | Jan 28, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A gate insulator film and a gate electrode are formed on an Si substrate, and a CVD insulator film is deposited thereon to cover the gate electrode. Then, arsenic ions are implanted into the Si substrate from above the CVD insulator film to form LDD layers. After sidewall spacers have been formed over the side faces of the gate electrode with the CVD insulator film interposed therebetween, source/drain layers are formed. Since the LDD layers are formed by implanting dopant ions through the CVD insulator film, the passage of arsenic ions through the ends of the gate electrode can be suppressed. As a result, a semiconductor device suitable for miniaturization can be formed, while suppressing deterioration in insulating properties of the gate oxide film due to the passage of dopant ions through the ends of the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.