Film forming method, semiconductor device manufacturing method, and semiconductor device
US6472334B2 · kind B2 · utility
5Cited by
4References
15Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Apr 3, 2001 |
| Grant date | Oct 29, 2002 |
| Priority date | — |
| Expiry date | Apr 3, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a method of forming a silicon-containing insulating film on a substrate by reacting a compound having siloxane bonds and Si—R bonds (R is alkyl group) with a plasmanized reaction gas containing an oxidizing gas and H2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.