Method and apparatus for measuring characteristics of ferromagnetic tunnel magnetoresistance effect element, and hard disk drive
US6473257B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 4, 2000 |
| Grant date | Oct 29, 2002 |
| Priority date | — |
| Expiry date | Apr 4, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/455
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method for measuring characteristics of a tunnel magnetoresistance effect element having a tunnel multilayered film comprising a tunnel barrier layer and a first and a second ferromagnetic layer formed to sandwich the tunnel barrier layer therebetween. This method comprises the steps of setting an initial current value I0 which does not destroy the element to be measured, measuring, using the current value I0, a first resistance value R1 as an approximate resistance value of the element, defining, based on the first resistance value R1 and a voltage value Vs which is a measurement standard for the element, an inspection current value Is (Is=Vs/R1), and measuring characteristics of the element using the inspection current value Is. Therefore, “without damaging or destroying elements” and “in an effective way”, the characteristics of the element can be measured.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.