Semiconductor integrated circuit and nonvolatile semiconductor memory
US6473321B2 · kind B2 · utility
41Cited by
8References
23Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jun 19, 2001 |
| Grant date | Oct 29, 2002 |
| Priority date | — |
| Expiry date | Jun 19, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02M3/075
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
For a semiconductor integrated circuit having an internal booster circuit such as a flash memory, voltage booster circuits capable of generating a boosted voltage 10 times or more as high as a relatively low source voltage is to be realized. Charge pumps for carrying out first stage voltage boosting on the basis of a source voltage are configured of parallel capacity type units, and charge pumps for carrying out second stage voltage boosting on the basis of the boosted voltage generated by the first charge pumps are configured of serial capacity type units.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.