Electrically variable multi-state resistance computing
US6473332B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 4, 2001 |
| Grant date | Oct 29, 2002 |
| Priority date | — |
| Expiry date | Apr 4, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/31
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An electrically operated, overwritable, multivalued, non-volatile resistive memory element is disclosed. The memory element includes a two terminal non-volatile memory device in which a memory film material is included, and a circuit topological configuration is defined. The memory device relates generally to a unique new electrically induced variable resistance effect, which has been discovered in thin films of colossal magnetoresistive (CMR) oxide materials. The memory material is characterized by: 1) the electrical control of resistance through the application of short duration low voltage electrical pulses at room temperature and with no applied magnetic field; 2) increase of the resistance or decrease of the resistance depending on the polarity of the applied pulses; 3) a large dynamic range of electrical resistance values; and 4) the ability to be set at one of a plurality of resistance values within said dynamic range in response to selected electrical input signals so as to provide said single cell with multibit/multivalued storage capabilities. The memory element includes a circuit topology to construct a ROM/RAM configuration. The features of the memory element circuit ar…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.