Micromechanical rate of rotation sensor (DRS)
US6474162B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 9, 1998 |
| Grant date | Nov 5, 2002 |
| Priority date | — |
| Expiry date | Oct 20, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01C19/5621
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A rate of rotation sensor is suggested which is structured out of silicon (silicon compounds or silicon/glass compounds) or other semiconductor materials by means of micromechanical techniques. The rate of rotation sensor has the form of a tuning fork whose prongs are situated in planes in parallel to the surface of the semiconductor wafer. These prongs are exited to carry out vibrations in a plane perpendicular to the wafer plane. By means of a sensor element which registers the torsion of the tuning fork suspension, the angular velocity of a rotation of the sensor about an axis in parallel to the tuning fork suspension is measured.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.