Deposited film producing process, photovoltaic device producing process, and deposited film producing system
US6475354B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 8, 1998 |
| Grant date | Nov 5, 2002 |
| Priority date | — |
| Expiry date | Jul 8, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/544
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
This invention relates to a deposited film producing process that enables reduction of the time for adjusting the conditions for film formation, and brings about an improvement in the reproducibility of film thickness and film quality of the deposited film formed. This process comprises the steps of, in the state where a substrate is set in a film-forming chamber, introducing a sputtering gas containing no reactive gas into the film-forming chamber and causing discharge therein, adjusting the sensitivity of a device for monitoring emission intensity of plasma of the discharge, in such a way that the device reads a set value, and introducing at least a reactive gas into the film-forming chamber to deposit a film on the substrate by subjecting a target to sputtering while controlling the feed rate of the reactive gas in such way as to provide a constant deposition rate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.